Datasheet4U Logo Datasheet4U.com

STW36NM60ND - N-CHANNEL POWER MOSFET

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.

Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.

Features

  • TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max. 0.110 Ω ID 29 A.
  • Designed for automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STW36N55M5 N-Channel MOSFET INCHANGE
STW3040 Transistors ST Microelectronics
STW30N65M5 N-Channel MOSFET INCHANGE
STW30NM60D N-channel Power MOSFET ST Microelectronics
STW3100 TRANSCEIVER MODULE ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STW36NM60N N-channel Power MOSFET
STW36N55M5 N-CHANNEL POWER MOSFET
STW36N60M6 N-CHANNEL POWER MOSFET
STW30N65M5 N-CHANNEL POWER MOSFET
STW30N80K5 N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datasheet - production data Features TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max. 0.110 Ω ID 29 A • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications • Automotive switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.
Published: |