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STW30N80K5 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • table Order code STW30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A 3 2 1 TO-247 Figure 1: Internal schematic diagram Features.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STW30N80K5 N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data Features table Order code STW30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A 3 2 1 TO-247 Figure 1: Internal schematic diagram Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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