Datasheet4U Logo Datasheet4U.com

STW30N65M5 - N-Channel MOSFET

Description

purpose applications.

Features

  • Static Drain-Source On-Resistance : RDS(on) = 0.139Ω(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STW30N65M5 N-CHANNEL POWER MOSFET STMicroelectronics
STW30N80K5 N-channel Power MOSFET STMicroelectronics
STW30NF20 N-channel Power MOSFET STMicroelectronics
STW30NM50N Power MOSFET STMicroelectronics
STW30NM60D N-channel Power MOSFET ST Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STW31N65M5 N-Channel MOSFET
STW32N65M5 N-Channel MOSFET
STW32NM50N N-Channel MOSFET
STW34N65M5 N-Channel MOSFET
STW34NM60N N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor STW30N65M5 FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.139Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pluse 88 A PD Total Dissipation @TC=25℃ 140 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
Published: |