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STW36NM60N
N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247
Features
Order code STW36NM60N
VDSS @ TJmax
650 V
RDS(on) max
< 0.105 Ω
ID 29 A
PW 210 W
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
■ Switching applications – Automotive
Description
This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
3 2 1
TO-247
Figure 1. Internal schematic diagram
$
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Table 1.
STW36NM60N Datasheet
