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STW265N6F6AG - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code STW265N6F6AG VDS 60 V RDS(on) max 2.85 mΩ ID 180 A.
  • Designed for automotive.

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Full PDF Text Transcription

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STW265N6F6AG Automotive N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-247 package Datasheet - preliminary data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW265N6F6AG VDS 60 V RDS(on) max 2.85 mΩ ID 180 A  Designed for automotive applications  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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