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STW20N60M2-EP - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology.

Key Features

  • Order code VDS RDS(on) max. STW20N60M2-EP 600 V 0.278 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected ID 13 A D(2) G(1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW20N60M2-EP N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-247 package 3 2 1 TO-247 Features Order code VDS RDS(on) max. STW20N60M2-EP 600 V 0.278 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected ID 13 A D(2) G(1) Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology.