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STW26NM60N-H
N-channel 600 V, 0.135 Ω , 20 A TO-247 MDmesh™ II Power MOSFET
Features
Type STW26NM60N-H
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VDSS 600 V
RDS(on) max < 0.165 Ω
ID 20 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247
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Application
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Switching applications
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Figure 1.
Internal schematic diagram
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3
3#
Table 1.
STW26NM60-H Datasheet
