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STRH8N10 - 6A N-channel Power MOSFET

Description

The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure.

It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).

Qualified as per ESCC detail specification No.

Features

  • VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC.
  • Fast switching.
  • 100 % avalanche tested.
  • Hermetic package.
  • 50 krad TID.
  • SEE radiation hardened.

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Datasheet preview – STRH8N10

Datasheet Details

Part number STRH8N10
Manufacturer STMicroelectronics
File Size 970.75 KB
Description 6A N-channel Power MOSFET
Datasheet download datasheet STRH8N10 Datasheet
Additional preview pages of the STRH8N10 datasheet.

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Full PDF Text Transcription

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STRH8N10 Datasheet Rad-Hard 100 V, 6 A, N-channel Power MOSFET 2 1 3 SMD.5 D(3) G(1) S(2) SC3015C Product status link STRH8N10 Features VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC • Fast switching • 100 % avalanche tested • Hermetic package • 50 krad TID • SEE radiation hardened Description The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/023 and available in SMD.
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