Datasheet4U Logo Datasheet4U.com

STRH10N25ESY3 - Power MOSFET

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

It is therefore suitable as power switch in mainly highefficiency DC-DC converters.

Features

  • Type STRH10N25ESY3.
  • www. DataSheet4U. com VDSS 250V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested.

📥 Download Datasheet

Datasheet preview – STRH10N25ESY3

📁 Similar Datasheet

  • STRH100N6 - N-channel Power MOSFET (STMicroelectronics)
  • STRH12P10 - Rad-Hard P-channel Power MOSFET (STMicroelectronics)
  • STRH40N6 - N-channel Power MOSFET (STMicroelectronics)
  • STRH40P10 - P-Channel Power MOSFET (STMicroelectronics)
  • STRH8N10 - 6A N-channel Power MOSFET (STMicroelectronics)
  • STRHMF16N20 - N-channel Power MOSFET (STMicroelectronics)
  • STR-4A60S - Sensitive Gate Triacs (SemiWell Semiconductor)
  • STR-4A60S - Sensitive Gate Triacs (TGS)
  • STR-50115 - STR50115 (ETC)
  • STR-50330 - Hybrid IC Voltage Regulator (Sanken electric)
Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET™ Power MOSFET General features Type STRH10N25ESY3 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ www.DataSheet4U.com VDSS 250V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-257AA 1 2 3 Internal schematic diagram ■ Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters.
Published: |