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STRH80P6FSY3 - P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

It is therefore suitable as power switch in mainly highefficiency DC-DC converters.

Features

  • www. DataSheet4U. com Type STRH80P6FSY3 VDSS 60V.
  • Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested.

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Datasheet Details

Part number STRH80P6FSY3
Manufacturer STMicroelectronics
File Size 335.89 KB
Description P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET
Datasheet download datasheet STRH80P6FSY3 Datasheet
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Full PDF Text Transcription

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STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET General features www.DataSheet4U.com Type STRH80P6FSY3 VDSS 60V ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-254AA Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters.
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