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STRH100N6 - N-channel Power MOSFET

Description

The STRH100N6 is an N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure.

It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).

Qualified as per ESCC detail specification No.

Features

  • VDS ID 60 V 40 A.
  • Fast switching.
  • 100% avalanche tested.
  • Hermetic package.
  • 50 krad TID.
  • SEE radiation hardened RDS(on) typ. 12 mΩ Qg 134.4 nC G(3) S(2) Product status link STRH100N6 SC30150.

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Datasheet preview – STRH100N6

Datasheet Details

Part number STRH100N6
Manufacturer STMicroelectronics
File Size 1.57 MB
Description N-channel Power MOSFET
Datasheet download datasheet STRH100N6 Datasheet
Additional preview pages of the STRH100N6 datasheet.

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Full PDF Text Transcription

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STRH100N6 Datasheet Rad-Hard 60 V, 40 A, N-channel Power MOSFET 1 2 3 TO-254AA D(1) Features VDS ID 60 V 40 A • Fast switching • 100% avalanche tested • Hermetic package • 50 krad TID • SEE radiation hardened RDS(on) typ. 12 mΩ Qg 134.4 nC G(3) S(2) Product status link STRH100N6 SC30150 Description The STRH100N6 is an N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No.
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