STO67N60M6 Datasheet PDF (N-channel Power MOSFET) | Download STMicroelectronics STO67N60M6

STO67N60M6 - N-channel Power MOSFET

Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Features

Order code VDS RDS(on) max. ID STO67N60M6 600 V 54 mΩ 34 A.
Reduced switching losses.
Lower RDS(on) per area vs previous generation.
Low gate input resistance.
100% avalanche tested.
Zener-protected.
High creepage package.
Excellent switching performance thanks to the extra driving source pin.

Datasheet Details

Part number	STO67N60M6
Manufacturer	STMicroelectronics
File Size	1.52 MB
Description	N-channel Power MOSFET
Datasheet	STO67N60M6 Datasheet
Additional preview pages of the STO67N60M6 datasheet.

📁 Similar Datasheet

STO-2016A - TCXO GPS (SIWARD)

STO-2520 - CRYSTAL OSCILLATOR (SIWARD)

STO-2520A - TCXO GPS (SIWARD)

STO-2520B - HCMOS TCXO (SIWARD)

STO-3225 - CRYSTAL OSCILLATOR (SIWARD)

STO-3225A - TCXO GPS (SIWARD)

STO-3225B - HCMOS TCXO (SIWARD)

STO-5032B - HCMOS TCXO (SIWARD)

STO-7050B - HCMOS TCXO (SIWARD)

STO200-02 - Stansard Surface Mount Package (Corning)

Full PDF Text Transcription

Click to expand full text

STO67N60M6 Datasheet N-channel 600 V, 48 mΩ typ., 34 A MDmesh M6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7,8) N-chG1DS2PS345678DTABZ Features Order code VDS RDS(on) max. ID STO67N60M6 600 V 54 mΩ 34 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Published: Jun 26, 2023 |