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STO65N60DM6
Datasheet
N‑channel 600 V, 67 mΩ typ., 46 A MDmesh DM6 Power MOSFET in a TO‑LL package
TO-LL
type A2
Drain (TAB)
Gate(1)
Driver source (2)
Power source (3, 4, 5, 6, 7,8)
N-chG1DS2PS345678DTABZ
Features
Order code
VDS
RDS(on) max.
ID
STO65N60DM6
600 V
76 mΩ
46 A
• Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.