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STO24N60M6
Datasheet
N-channel 600 V, 162 mΩ typ., 17 A, MDmesh M6 Power MOSFET in a TO‑LL package
TO-LL type A Drain (TAB)
Gate(1)
Driver source (2)
Power source (3, 4, 5, 6, 7,8)
N-chG1DS2PS345678DTABZ
Features
Order code
VDS
RDS(on) max.
ID
STO24N60M6
600 V
190 mΩ
17 A
• Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
Applications
• Switching applications • LLC converters • Boost PFC converters
Description
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.