STO52N60DM6 Datasheet PDF (N-channel Power MOSFET) | Download STMicroelectronics STO52N60DM6

STO52N60DM6 - N-channel Power MOSFET

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Features

Order code VDS RDS(on) max. ID STO52N60DM6 600 V 78 mΩ 45 A.
Fast-recovery body diode.
Lower RDS(on) per area vs previous generation.
Low gate charge, input capacitance and resistance.
100% avalanche tested.
Extremely high dv/dt ruggedness.
Zener-protected.
High-creepage package.
Excellent switching performance thanks to the extra driving source pin.

Datasheet Details

Part number	STO52N60DM6
Manufacturer	STMicroelectronics
File Size	1.52 MB
Description	N-channel Power MOSFET
Datasheet	STO52N60DM6 Datasheet
Additional preview pages of the STO52N60DM6 datasheet.

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Full PDF Text Transcription

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STO52N60DM6 Datasheet N‑channel 600 V, 68 mΩ typ., 45 A, MDmesh DM6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7,8) N-chG1DS2PS345678DTABZ Features Order code VDS RDS(on) max. ID STO52N60DM6 600 V 78 mΩ 45 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • High-creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Published: Jun 26, 2023 |