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STL325N4LF8AG - Automotive N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.

It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.

Key Features

  • Order code STL325N4LF8AG VDS 40 V.
  • AEC-Q101 qualified.
  • MSL1 grade.
  • 175 °C operating temperature.
  • 100% avalanche tested.
  • Wettable flank package RDS(on) max. 0.75 mΩ ID 373 A.

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Full PDF Text Transcription for STL325N4LF8AG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STL325N4LF8AG. For precise diagrams, and layout, please refer to the original PDF.

STL325N4LF8AG Datasheet Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 4 3 2 1 PowerFLAT 5x6 D(5,...

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STripFET F8 Power MOSFET in a PowerFLAT 5x6 4 3 2 1 PowerFLAT 5x6 D(5, 6, 7, 8) 8 76 5 Features Order code STL325N4LF8AG VDS 40 V • AEC-Q101 qualified • MSL1 grade • 175 °C operating temperature • 100% avalanche tested • Wettable flank package RDS(on) max. 0.75 mΩ ID 373 A Applications G(4) • Switching applications S(1, 2, 3) 12 34 Top View AM15540v2 Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.

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