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STL33N60M2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code V DS @ T Jmax STL33N60M2 650 V.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected RDS(on)max 0.135 Ω ID 22 A.

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Full PDF Text Transcription

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STL33N60M2 Datasheet N-channel 600 V, 0.115 Ω typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package 5 432 1 PowerFLAT 8x8 HV Drain(5) Gate(1) Driver source (2) Power source (3, 4) NG1DS2PS34D5Z Features Order code V DS @ T Jmax STL33N60M2 650 V • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected RDS(on)max 0.135 Ω ID 22 A Applications • Switching applications • LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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