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STL33N65M2 - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code STL33N65M2 VDS 650 V RDS(on)max 0.154 Ω ID 20 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STL33N65M2 N-channel 650 V, 0.124 Ω typ., 20 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data 5 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram Features Order code STL33N65M2 VDS 650 V RDS(on)max 0.154 Ω ID 20 A  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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