Datasheet Details
| Part number | STL30N10F7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 896.29 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STL30N10F7 Datasheet
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General Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- PowerFLAT 5x6 Order code VDS RDS(on) max. ID STL30N10F7 100 V 0.035 Ω 8A.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness PTOT 4.8 W D(5, 6, 7, 8) 8 76 5.