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STL320N4LF8 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.

It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.

Key Features

  • Order code STL320N4LF8 VDS 40 V.
  • MSL1 grade.
  • 175 °C operating temperature.
  • 100% avalanche tested RDS(on) max. 0.8 mΩ ID 360 A.

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Full PDF Text Transcription for STL320N4LF8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STL320N4LF8. For precise diagrams, and layout, please refer to the original PDF.

STL320N4LF8 Datasheet N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) 8 7...

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ower MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View GADG09062022 Features Order code STL320N4LF8 VDS 40 V • MSL1 grade • 175 °C operating temperature • 100% avalanche tested RDS(on) max. 0.8 mΩ ID 360 A Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.

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