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STL16N65M2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • 1234 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 Ω 7.5 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STL16N65M2 N-channel 650 V, 0.325 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features 1234 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 Ω 7.5 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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