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STL160N10F8 - N-channel Power MOSFET

Datasheet Summary

Description

The STL160N10F8 is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

Features

  • Order code STL160N10F8 VDS 100 V RDS(on) max. 3.2 mΩ ID 158 A PowerFLAT 5x6.
  • MSL1 grade.
  • 175 °C maximum operating junction temperature.
  • 100% avalanche tested.
  • Low gate charge Qg D(5, 6, 7, 8).

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Datasheet preview – STL160N10F8

Datasheet Details

Part number STL160N10F8
Manufacturer STMicroelectronics
File Size 936.55 KB
Description N-channel Power MOSFET
Datasheet download datasheet STL160N10F8 Datasheet
Additional preview pages of the STL160N10F8 datasheet.

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Full PDF Text Transcription

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STL160N10F8 Datasheet N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package Features Order code STL160N10F8 VDS 100 V RDS(on) max. 3.2 mΩ ID 158 A PowerFLAT 5x6 • MSL1 grade • 175 °C maximum operating junction temperature • 100% avalanche tested • Low gate charge Qg D(5, 6, 7, 8) Applications 8 76 5 • Server and Telecom power • Industrial battery management system (BMS) G(4) • Power tools • Drones S(1, 2, 3) 12 34 Top View GADG09062022 Description The STL160N10F8 is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
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