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STL160N3LLH6
N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET
Features
Order code STL160N3LLH6
VDSS 30 V
RDS(on) max
0.0013 Ω
ID 35 A (1)
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
1 2 3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
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Table 1.
STL160N3LLH6 Datasheet
