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STL165N10F8AG - Automotive N-channel Power MOSFET

Description

The STL165N10F8AG is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

Features

  • Order code VDS RDS(on) max. 4 3 2 1 PowerFLAT 5x6 STL165N10F8AG.
  • AEC-Q101 qualified.
  • MSL1 grade 100 V 3.2 mΩ D(5, 6, 7, 8) 8765.
  • 175 °C maximum operating junction temperature.
  • 100% avalanche tested.
  • Low gate charge Qg.
  • Wettable flank package G(4).

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Full PDF Text Transcription

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STL165N10F8AG Datasheet Automotive N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package Features Order code VDS RDS(on) max. 4 3 2 1 PowerFLAT 5x6 STL165N10F8AG • AEC-Q101 qualified • MSL1 grade 100 V 3.2 mΩ D(5, 6, 7, 8) 8765 • 175 °C maximum operating junction temperature • 100% avalanche tested • Low gate charge Qg • Wettable flank package G(4) Applications ID 158 A S(1, 2, 3) 1234 Top View AM15540v3 • Automotive motor control • Electro mobility Description The STL165N10F8AG is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
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