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STL16N1VH5 - N-channel Power MOSFET

Description

roThis device is an N-channel Power MOSFET Pdeveloped using STMicroelectronics’ teSTripFET™V technology.

Obsoits class.

Figure 1.

Features

  • Order code VDSS RDS(on) max ID STL16N1VH5 12 V 0.003 Ω 16 A (1) t(s)1. The value is rated according Rthj-pcb c.
  • Improved die-to-footprint ratio u.
  • Very low profile package (1mm max) rod.
  • Very low thermal resistance P.
  • Very low gate charge te.
  • Very low on-resistance le.
  • Optimized to be driven @ 2.5 V so.
  • In compliance with the 2002/95/EC European bdirective - O.

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Full PDF Text Transcription

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STL16N1VH5 N-channel 12 V, 0.0022 Ω , 16 A, PowerFLAT™ (3.3 x 3.3) STripFET™ V Power MOSFET Features Order code VDSS RDS(on) max ID STL16N1VH5 12 V 0.003 Ω 16 A (1) t(s)1. The value is rated according Rthj-pcb c■ Improved die-to-footprint ratio u■ Very low profile package (1mm max) rod■ Very low thermal resistance P■ Very low gate charge te■ Very low on-resistance le■ Optimized to be driven @ 2.5 V so■ In compliance with the 2002/95/EC European bdirective - OApplications t(s)■ Switching applications ducDescription roThis device is an N-channel Power MOSFET Pdeveloped using STMicroelectronics’ teSTripFET™V technology. The device has been leoptimized to achieve very low on-state resistance, contributing to an FOM that is among the best in Obsoits class. PowerFLAT™(3.3x3.
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