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STGE50NC60WD - N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix “W” identifies a family optimized for very high frequency applications.

Figure 1.

Key Features

  • Type STGE50NC60WD.
  • VCES 600V VCE(sat) (Max) IC @25°C @100°C 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP.

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www.DataSheet4U.com STGE50NC60WD N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESH™ IGBT Features Type STGE50NC60WD ■ ■ ■ ■ VCES 600V VCE(sat) (Max) IC @25°C @100°C 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency applications. Figure 1.