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STGE200NB60S - N-CHANNEL IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGE200NB60S N-CHANNEL 150A - 600V - ISOTOP PowerMESH™ IGBT TYPE STGE200NB60S s s s s s VCES 600 V VCE(sat) (typ.) 1.2 V 1.3 V IC 150 A 200 A TC 100°C 25°C HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY ISOTOP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).