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STG60H65FBD7 - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A.
  • Safe paralleling.
  • Tight parameter distribution.

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Full PDF Text Transcription

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STG60H65FBD7 Datasheet Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing C G E EGCD Product status link STG60H65FBD7 Product summary Order code STG60H65FBD7 VCE 6.32 x 4.90 mm ICN 60 A Die size 6.32 x 4.90 mm Packing D7 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A • Safe paralleling • Tight parameter distribution Applications • Solar • Welding • High frequency converter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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