STD7NM80-1 Datasheet PDF (N-channel Power MOSFET) | Download STMicroelectronics STD7NM80-1

STD7NM80-1 - N-channel Power MOSFET

Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

Features

TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK STD7NM80-1 800 V.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance 1.05 Ω 6.5 A Produ D(2, TAB).

Datasheet Details

Part number	STD7NM80-1
Manufacturer	STMicroelectronics
File Size	468.96 KB
Description	N-channel Power MOSFET
Datasheet	STD7NM80-1 Datasheet
Additional preview pages of the STD7NM80-1 datasheet.

📁 Similar Datasheet

STD7NM80 - N-CHANNEL MOSFET (ST Microelectronics)

STD7NM60N - N-Channel MOSFET (INCHANGE)

STD7N52DK3 - Power MOSFET (ST Microelectronics)

STD7N80K5 - N-Channel MOSFET (INCHANGE)

STD7NB20 - N-CHANNEL MOSFET (ST Microelectronics)

STD7NB20-1 - N-CHANNEL MOSFET (ST Microelectronics)

STD7NK40Z - N-CHANNEL MOSFET (ST Microelectronics)

STD7NK40Z-1 - N-CHANNEL MOSFET (ST Microelectronics)

STD7NS20 - N-CHANNEL MOSFET (ST Microelectronics)

STD7NS20-1 - N-CHANNEL MOSFET (ST Microelectronics)

Full PDF Text Transcription

Click to expand full text

STD7NM80-1 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh Power MOSFET in an IPAK package Features TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK STD7NM80-1 800 V • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance 1.05 Ω 6.5 A Produ D(2, TAB) Applications • Switching applications solete G(1) t(s) - Ob S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics.

Published: Jun 26, 2023 |