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STD7NS20 STD7NS20-1
N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY™ MOSFET
PRELIMINARY DATA TYPE STD7NS20 STD7NS20-1
s s s s s
VDSS 200 V 200 V
RDS(on) < 0.40 Ω < 0.40 Ω
ID 7A 7A
3 1
2 1 3
TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
DPAK TO-252
IPAK TO-251
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
STD7NS20 Datasheet
