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STD7N90K5 - N-Channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code VDS RDS(on ) max. ID STD7N90K5 900 V 0.81 Ω 7A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STD7N90K5

Datasheet Details

Part number STD7N90K5
Manufacturer STMicroelectronics
File Size 503.85 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STD7N90K5 Datasheet
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Full PDF Text Transcription

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STD7N90K5 Datasheet N-channel 900 V, 0.72 Ω typ., 7 A MDmesh K5 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on ) max. ID STD7N90K5 900 V 0.81 Ω 7A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications AM01476v1_tab Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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