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STD7NM80
Datasheet
N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh Power MOSFET in a DPAK package
Features
TAB
23 1 DPAK
D(2, TAB)
Order code
VDS
RDS(on) max.
STD7NM80
800 V
1.05 Ω
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Applications
ID 6.5 A
• Switching applications
G(1)
Description
S(3)
This N-channel Power MOSFET is developed using STMicroelectronics'
revolutionary MDmesh technology, which associates the multiple drain process
AM01475v1_noZen with the company's PowerMESH horizontal layout. This device offers extremely
low on-resistance, high dv/dt, and excellent avalanche characteristics.