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STD7N80K5 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤1.2Ω.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STD7N80K5

Datasheet Details

Part number STD7N80K5
Manufacturer INCHANGE
File Size 239.58 KB
Description N-Channel MOSFET
Datasheet download datasheet STD7N80K5 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.2Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.14 UNIT ℃/W STD7N80K5 isc website：www.iscsemi.
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