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STB155N3LH6 STD155N3LH6
N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET
Features
Order codes
STB155N3LH6 STD155N3LH6
VDSS 30 V
RDS(on) max
3.0 mΩ
1. Current limited by package
■ 100% avalanche tested ■ Logic level drive
ID(1) PTOT 80 A 110 W
Applications
■ Switching applications ■ Automotive
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
TAB
3 1 D²PAK
TAB
3 1
DPAK
Figure 1. Internal schematic diagram
$ 4!" OR
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Table 1.
STB155N3LH6 Datasheet
