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STB155N3H6 - N-channel MOSFET

Description

These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Features

  • Order codes STB155N3H6 STD155N3H6 VDSS 30 V 30 V RDS(on) max < 3 mΩ < 3 mΩ ID 80 A (1) 80 A (1) 1. Limited by wire bonding.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.

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Full PDF Text Transcription

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STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features Order codes STB155N3H6 STD155N3H6 VDSS 30 V 30 V RDS(on) max < 3 mΩ < 3 mΩ ID 80 A (1) 80 A (1) 1. Limited by wire bonding ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications ■ Automotive Description These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1.
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