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STB15N80K5 - N-channel Power MOSFET

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code VDS STB15N80K5 STF15N80K5 800 V STP15N80K5 STW15N80K5 RDS(on)max 0.375 Ω ID 14 A PTOT 190 W 35 W 190 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Features Order code VDS STB15N80K5 STF15N80K5 800 V STP15N80K5 STW15N80K5 RDS(on)max 0.375 Ω ID 14 A PTOT 190 W 35 W 190 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
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