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STAP85025S - N-channel enhancement-mode lateral MOSFETs

Description

The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 13.6 V in common source mode at a frequency up to 1 GHz.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V.
  • Plastic package.
  • ESD protection.
  • In compliance with the 2002/95/EC European directive Table 1. Device summary Order code Marking Package STAP85025S STAP85025S STAP1 Packing Tube December 2015 This is information on a product in full production. DocID15795 Rev 5 1/13 www. st. com Contents Contents STAP85025S 1 Electrical dat.

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Full PDF Text Transcription

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STAP85025S RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet - production data STAP1 Figure 1. Pin connection Drain Description The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio. The STAP® ST plastic package has been designed to offer high reliability and high power capability.
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