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STAP1011-180 - RF Power Transistor

Description

The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor.

It is designed for 1030-1090 MHz avionics applications.

STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package.

Features

  • Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In compliance with the 2002/95/EC european directive.

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STAP1011-180 www.datasheet4u.com RF power transistor the LdmoST family, N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In compliance with the 2002/95/EC european directive Description The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for 1030-1090 MHz avionics applications. STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package. The STAP package was designed to offer high reliability and power capability. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Figure 1.
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