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STAP85025 - Transistors

Description

The STAP85025 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

Features

  • Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive.

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www.DataSheet4U.com STAP85025 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive Description STAP1 The STAP85025 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. STAP85025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP ST advanced PowerSO-10RF package.
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