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STAP57060 - RF power transistor

Description

The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Features

  • Excellent thermal stability Common source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package.

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STAP57060 www.datasheet4u.com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package Description The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package. STAP package has been specially optmized for RF needs and offers excellent performances and ease of assembly.
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