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SGSP358 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss RoS(on) 10 SGSP358 50 V 0.3 G 7A • HIGH SPEED SWITCHING APPLICATIONS • GENERAL PURPOSE • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • D.C. SWITCH • UNINTERRUPTIBLE POWER SUPPLIES N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications. Typical applications include DC switching, uninterruptible power supplies and drive circuits for power bipolar transistor. , TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KG) Gate-source voltage Drain current (cont.
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