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SGSP316 SGSP317
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
Voss
ROS(on)
10
SGSP316 250 V
1.20
5A
SGSP317 200 V
0.750
6A
• HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST) • • EASY DRIVE - REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • DC SWITCH
N - channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications. Typical uses are in telecommunications, switching power supplies and as a DC switch.