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SGSP317 - N-CHANNEL POWER MOS TRANSISTORS

Download the SGSP317 datasheet PDF. This datasheet also covers the SGSP316 variant, as both devices belong to the same n-channel power mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (SGSP316-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
SGSP311 N-CHANNEL POWER MOS TRANSISTORS
SGSP316 N-CHANNEL POWER MOS TRANSISTORS
SGSP319 N-CHANNEL POWER MOS TRANSISTORS
SGSP301 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
SGSP321 N-CHANNEL POWER MOS TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
~~ 'YL S~DG©OSO©-~1[H]JO~©MuOOS©O~DN©~ SGSP316 SGSP317 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss ROS(on) 10 SGSP316 250 V 1.20 5A SGSP317 200 V 0.750 6A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) • • EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • DC SWITCH N - channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications. Typical uses are in telecommunications, switching power supplies and as a DC switch.
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