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SGSP319
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE SGSP319
Voss 500 V
ROS(on) 3.8 0
10 2.8 A
• HIGH SPEED SWITCHING APPLICATIONS • 500V - HIGH VOLTAGE FOR SMPS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES
N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications. Typical applications include switching power supplies, battery chargers, motor speed control and solenoid drivers.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 KO)
Gate-source voltage
Drain current (cont.) at Tc = 25°C
Drain current (cont.
SGSP319 Datasheet
