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SGSP351
N - CHANNEL ENHANCEMENT MODE POWER MaS TRANSISTOR
TYPE
Voss
ROS(on)
10
SGSP351 100 V
0.6 {}
6A
• HIGH SPEED SWITCHING APPLICATIONS • DCIDC APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • MOTOR CONTROL
N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typica~ applications include stepper motor and printer hammer drives and switching power supplies
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
VOGR VGS 10
Tstg Tj
Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 K{})
Gate-source voltage
Drain current (cont.) at Tc =25°C Drain current (cont.
SGSP351 Datasheet
