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/ T 7 SCS-THOMSON
[*03(m i(graKi(gS
SGSP341
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE SGSP341
V DSS 400 V
^DS(on) 20 n
b 0.6 A
• HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: • GENERAL PURPOSE
N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch
TO-220
ing times make this POWER MOS transistor ideal
for high speed switching applications. Typical ap
plications include motor starter and drive circuits
for power bipolar transistors.
INTERNAL SCHEMATIC
°
DIAGRAM
GOS
ABSOLUTE MAXIMUM RATINGS
V DS V dgr V GS b b *dm (*) •dlm O Plot
T tg Ti
Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.
SGSP341 Datasheet
