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RF5L05750CF2 - RF power LDMOS transistor

Description

The RF5L05750CF2 is a 750 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz.

It can be used for both CW and pulse application.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L05750CF2(1) 108 MHz 50 V 1500 W 20 dB 78% 1. Measured on 88-108 MHz wideband test board with two RF5L05750CF2 devices connected in push-pull.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95.

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Datasheet preview – RF5L05750CF2

Datasheet Details

Part number RF5L05750CF2
Manufacturer STMicroelectronics
File Size 1.60 MB
Description RF power LDMOS transistor
Datasheet download datasheet RF5L05750CF2 Datasheet
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Full PDF Text Transcription

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RF5L05750CF2 Datasheet 750 W, 50 V, HF to 500 MHz RF power LDMOS transistor 2 1 3 C2 Pin connection Pin Connection 1 Gate 2 Drain 3 Source (bottom side) Product status link RF5L05750CF2 Product summary Order code RF5L05750CF2 Marking 5L05750 Package C2 Packing Tape and reel 13" Base/bulk quantity 100/100 Features Order code Frequency VDD POUT Gain Efficiency RF5L05750CF2(1) 108 MHz 50 V 1500 W 20 dB 78% 1. Measured on 88-108 MHz wideband test board with two RF5L05750CF2 devices connected in push-pull.
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