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RF5L05500CB4
Datasheet
500 W, 50 V, HF to 500 MHz RF power LDMOS transistor
1 2
5
4
LBB
3
Pin connection
Pin
Connection
1
Drain A
2
Drain B
3
Source (bottom side)
4
Gate B
5
Gate A
Features
Order code
Frequency
VDD
POUT
Gain Efficiency
RF5L05500CB4
108 MHz
50 V
500 W
19 dB
70%
• High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C
operation • In compliance with the European directive 2002/95/EC
Applications
• 30-88 MHz/136-174 MHz ground communication • Plasma generator • Particle accelerator • FM and VHF TV broadcast
Description
The RF5L05500CB4 is a 500 W, 50 V, high performance LDMOS FET designed for multiple applications in the frequency range from HF to 500 M
RF5L05500CB4 Datasheet
