RF5L052K0CB4 Datasheet PDF (RF power LDMOS transistor) | Download STMicroelectronics RF5L052K0CB4

RF5L052K0CB4 - RF power LDMOS transistor

Description

The RF5L052K0CB4 is a 2000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz.

It can be used for both CW and pulse application.

Features

Order code Frequency VDD POUT Gain Efficiency RF5L052K0CB4 108 MHz 50 V 2000 W 19.5 dB 77%.
High efficiency and linear gain operations.
Integrated ESD protection.
Large positive and negative gate-source voltage range for improved class C operation.
High breakdown voltage enable class E operation.
On chip RC network enable high stability and ruggedness.
Excellent thermal stability, low HCI drift.
In compliance with the euro.

Datasheet Details

Part number	RF5L052K0CB4
Manufacturer	STMicroelectronics
File Size	1.29 MB
Description	RF power LDMOS transistor
Datasheet	RF5L052K0CB4 Datasheet
Additional preview pages of the RF5L052K0CB4 datasheet.

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Full PDF Text Transcription

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RF5L052K0CB4 Datasheet 2000 W, 50 V, HF to 500 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Product status link RF5L052K0CB4 Product summary Order code RF5L052K0CB4 Marking 5L052K0 Package D4E Packing Tray Base/bulk quantity 20/100 Features Order code Frequency VDD POUT Gain Efficiency RF5L052K0CB4 108 MHz 50 V 2000 W 19.

Published: Mar 23, 2023 |