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RF5L051K5CB4 - RF power LDMOS transistor

Description

The RF5L051K5CB4 is a 1500 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz.

It can be used for both CW and pulse application.

Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L051K5CB4 108 MHz 50 V 1500 W 22 dB 80%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • On chip RC network enable high stability and ruggedness.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95/EC.

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Datasheet preview – RF5L051K5CB4

Datasheet Details

Part number RF5L051K5CB4
Manufacturer STMicroelectronics
File Size 1.31 MB
Description RF power LDMOS transistor
Datasheet download datasheet RF5L051K5CB4 Datasheet
Additional preview pages of the RF5L051K5CB4 datasheet.

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Full PDF Text Transcription

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RF5L051K5CB4 Datasheet 1500 W, 50 V, HF to 500 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF5L051K5CB4 108 MHz 50 V 1500 W 22 dB 80% • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • On chip RC network enable high stability and ruggedness • Excellent thermal stability, low HCI drift • In compliance with the european directive 2002/95/EC Applications • 30-88 MHz/136-174 MHz ground communication • 1.
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